Thats quite exciting. I am hoping to do a uni project on MVDC for an alumina refinery.MSimon wrote: http://www.aist.go.jp/aist_e/latest_res ... 50407.html
In comparison to the conventional silicon insulated gate bipolar transistor (Si-IGBT) for inverter circuit, the power loss is extensively reduced to 1/12.
Graphene Conductor 1000x Better than Copper
In theory there is no difference between theory and practice, but in practice there is.
Graphene grown on copper via CVD:
"Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils"
http://www.sciencemag.org/cgi/content/a ... /5932/1312
"We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene..."
"We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature."
"Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils"
http://www.sciencemag.org/cgi/content/a ... /5932/1312
"We grew large-area graphene films of the order of centimeters on copper substrates by chemical vapor deposition using methane. The films are predominantly single-layer graphene..."
"We also developed graphene film transfer processes to arbitrary substrates, and dual-gated field-effect transistors fabricated on silicon/silicon dioxide substrates showed electron mobilities as high as 4050 square centimeters per volt per second at room temperature."